2SD1221-Y(Q) Toshiba Semiconductor and Storage | HongDa Electronics

2SD1221-Y(Q) HongDa Electronics

Manufacturer Part# 2SD1221-Y(Q)
Product CategoryDiscrete Semiconductor Products
Short DescriptionTRANS NPN 60V 3A PW MOLD
More DetailBipolar (BJT) Transistor NPN 60V 3A 3MHz 1W Surfac...

In Stock: 1000

Can ship immediately

Datasheet:

2SD1221-Y(Q) Datasheet

Technical Details

Series:--
Packaging:Bulk
Part Status:Obsolete
Transistor Type:NPN
Current - Collector (Ic) (Max):3A
Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:1V @ 300mA, 3A
Current - Collector Cutoff (Max):100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 500mA, 5V
Power - Max:1W
Frequency - Transition:3MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:PW-MOLD

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