2SD1407A-Y(F) Toshiba Semiconductor and Storage | HongDa Electronics

2SD1407A-Y(F) HongDa Electronics

Manufacturer Part# 2SD1407A-Y(F)
Product CategoryDiscrete Semiconductor Products
Short DescriptionTRANS NPN 100V 5A TO220NIS
More DetailBipolar (BJT) Transistor NPN 100V 5A 12MHz 30W Thr...

In Stock: 1000

Can ship immediately

Datasheet:

2SD1407A-Y(F) Datasheet

Technical Details

Series:--
Packaging:Tube
Part Status:Obsolete
Transistor Type:NPN
Current - Collector (Ic) (Max):5A
Voltage - Collector Emitter Breakdown (Max):100V
Vce Saturation (Max) @ Ib, Ic:2V @ 400mA, 4A
Current - Collector Cutoff (Max):100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1A, 5V
Power - Max:30W
Frequency - Transition:12MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220NIS

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