94-3250 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.1V @ 250µA
• Package / Case:DirectFET™ Isometric MQ
• Supplier Device Package:DIRECTFET™ MQ
• Mounting Type:Surface Mount
• Operating Temperature:-40°C ~ 150°C (TJ)
• Power Dissipation (Max):2.3W (Ta), 42W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2270pF @ 15V
• Vgs (Max):±12V
• Gate Charge (Qg) (Max) @ Vgs:26nC @ 4.5V

• Series:HEXFET®
• Rds On (Max) @ Id, Vgs:11.5 mOhm @ 12A, 7V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
• Current - Continuous Drain (Id) @ 25°C:12A (Ta), 49A (Tc)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)