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APT25SM120B

Microsemi Corporation
APT25SM120B HongDa Electronics APT25SM120B
  • Manufacturer Part# APT25SM120B
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionPOWER MOSFET - SIC
  • More DetailN-Channel 1200V 25A (Tc) 175W (Tc) Through Hole TO...
In Stock: 1000

Can ship immediately

Datasheet:
APT25SM120B Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):175W (Tc)
  • FET Feature:--
  • Vgs (Max):+25V, -10V
  • Gate Charge (Qg) (Max) @ Vgs:72nC @ 20V
  • Series:--

 

  • Rds On (Max) @ Id, Vgs:175 mOhm @ 10A, 20V
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Current - Continuous Drain (Id) @ 25°C:25A (Tc)
  • Drain to Source Voltage (Vdss):1200V
  • Technology:SiCFET (Silicon Carbide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Bulk 

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