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1. Describe
This HEXFET® is designed for automotive applications Power MOSFETs are implemented using the latest processing technology The on-resistance of each silicon area is extremely low. additional features The design is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche ratings. These features combine to make this design very efficient and Reliable equipment for automotive applications and various other applications.
2. Feature
1. Advanced process technology
2. Ultra-low on-resistance
3. Logic level gate drive
4. Dynamic dv/dt ratings
5. 175°C operating temperature
6. Quick switch
7. Allows repeated avalanches up to Tjmax
8. Lead-free, RoHS compliant
9. Automotive certification*
3. Pin configuration
4. Electrical Characteristics
5. Pin Package Outline
