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BC637G

ON Semiconductor
BC637G HongDa Electronics BC637G
  • Manufacturer Part# BC637G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN 60V 1A TO-92
  • More DetailBipolar (BJT) Transistor NPN 60V 1A 200MHz 625mW T...
In Stock: 1000

Can ship immediately

Datasheet:
BC637G Datasheet

Technical Details

  • Series:--
  • Packaging:Bulk 
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1A
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V

 

  • Power - Max:625mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Base Part Number:BC637

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