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BCR 112L3 E6327

Infineon Technologies
BCR 112L3 E6327 HongDa Electronics BCR 112L3 E6327
  • Manufacturer Part# BCR 112L3 E6327
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PREBIAS NPN 250MW TSLP-3
  • More DetailPre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
In Stock: 1000

Can ship immediately

Datasheet:
BCR 112L3 E6327 Datasheet

Technical Details

  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 5V
  • Base Part Number:BCR112
  • Supplier Device Package:PG-TSLP-3-4
  • Package / Case:SC-101, SOT-883
  • Mounting Type:Surface Mount
  • Power - Max:250mW
  • Frequency - Transition:140MHz
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA

 

  • Series:--
  • Resistor - Emitter Base (R2):4.7 kOhms
  • Resistor - Base (R1):4.7 kOhms
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Current - Collector (Ic) (Max):100mA
  • Transistor Type:NPN - Pre-Biased
  • Part Status:Discontinued at Digi-Key
  • Packaging:Tape & Reel (TR) 

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