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BCR169WE6327HTSA1

Infineon Technologies
BCR169WE6327HTSA1 HongDa Electronics BCR169WE6327HTSA1
  • Manufacturer Part# BCR169WE6327HTSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PREBIAS PNP 250MW SOT323-3
  • More DetailPre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
In Stock: 1000

Can ship immediately

Datasheet:
BCR169WE6327HTSA1 Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Obsolete
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA

 

  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:250mW
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323-3
  • Base Part Number:BCR169

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