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BD13916S

ON Semiconductor
BD13916S HongDa Electronics BD13916S
  • Manufacturer Part# BD13916S
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN 80V 1.5A TO-126Bipolar (BJT) Transistor ...
  • More DetailN/A
In Stock: 1000

Can ship immediately

Datasheet:
BD13916S Datasheet

Technical Details

  • Series:BD139
  • Packaging:Bulk 
  • FET Type:--
  • Part Status:Active
  • Technology:Si
  • Transistor Type:NPN
  • Drain to Source Voltage (Vdss):--
  • Current - Collector (Ic) (Max):1.5A
  • Current - Continuous Drain (Id) @ 25°C:--
  • Voltage - Collector Emitter Breakdown (Max):80V
  • Drive Voltage (Max Rds On, Min Rds On):--
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Rds On (Max) @ Id, Vgs:--
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Vgs(th) (Max) @ Id:--

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
  • Gate Charge (Qg) (Max) @ Vgs:--
  • Power - Max:1.25W
  • Vgs (Max):--
  • Frequency - Transition:--
  • Input Capacitance (Ciss) (Max) @ Vds:--
  • Operating Temperature:150°C (TJ)
  • FET Feature:--
  • Mounting Type:Through Hole
  • Power Dissipation (Max):--
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Base Part Number:BD13916S

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Description

Trans GP BJT NPN 80V 1.5A 3-Pin (3 + Tab) TO-126 bulk

2. Features

    1. 80V collector base voltage

    2. NPN epitaxial silicon transistor

    3. Supplement BD136, BD138 and BD140 respectively

3. Electrical Characteristics

     image.png

4. Package Demensions

     image.png


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