BD645-S

Technical Details

• Series:--
• Packaging:Tube 
• Part Status:Obsolete
• Transistor Type:NPN - Darlington
• Current - Collector (Ic) (Max):8A
• Voltage - Collector Emitter Breakdown (Max):60V
• Vce Saturation (Max) @ Ib, Ic:2.5V @ 50mA, 5A
• Current - Collector Cutoff (Max):500µA

• DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
• Power - Max:2W
• Frequency - Transition:--
• Operating Temperature:-65°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-220-3
• Supplier Device Package:TO-220