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BSC026NE2LS5ATMA1

Infineon Technologies
BSC026NE2LS5ATMA1 HongDa Electronics BSC026NE2LS5ATMA1
  • Manufacturer Part# BSC026NE2LS5ATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 25V 24A 8TDSON
  • More DetailN-Channel 25V 24A (Ta), 82A (Tc) 2.5W (Ta), 29W (T...
In Stock: 1000

Can ship immediately

Datasheet:
BSC026NE2LS5ATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PG-TDSON-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.5W (Ta), 29W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 12V
  • Vgs (Max):±16V
  • Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:2.6 mOhm @ 30A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:24A (Ta), 82A (Tc)
  • Drain to Source Voltage (Vdss):25V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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