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BSC097N06NSTATMA1

Infineon Technologies
BSC097N06NSTATMA1 HongDa Electronics BSC097N06NSTATMA1
  • Manufacturer Part# BSC097N06NSTATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionDIFFERENTIATED MOSFETS
  • More DetailN-Channel 60V 13A (Ta), 48A (Tc) 3W (Ta), 43W (Tc)...
In Stock: 1000

Can ship immediately

Datasheet:
BSC097N06NSTATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.3V @ 14µA
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PG-TDSON-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):3W (Ta), 43W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1075pF @ 30V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:9.7 mOhm @ 40A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Current - Continuous Drain (Id) @ 25°C:13A (Ta), 48A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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