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BSP123E6327T

Infineon Technologies
BSP123E6327T HongDa Electronics BSP123E6327T
  • Manufacturer Part# BSP123E6327T
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 370MA SOT223
  • More DetailN-Channel 100V 370mA (Ta) 1.79W (Ta) Surface Mount...
In Stock: 1000

Can ship immediately

Datasheet:
BSP123E6327T Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1.8V @ 50µA
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:PG-SOT223-4
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):1.79W (Ta)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:70pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:2.4nC @ 10V

 

  • Series:SIPMOS®
  • Rds On (Max) @ Id, Vgs:6 Ohm @ 370mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
  • Current - Continuous Drain (Id) @ 25°C:370mA (Ta)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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