• Manufacturer Part# CSD25404Q3T
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 20V 104A 8VSONP-Channel 20V 104A (Tc) ...
  • More DetailN/A
In Stock: 15000

Can ship immediately

Technical Details

  • Series:NexFET™
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:6.5 mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id:1.15V @ 250µA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:14.1nC @ 4.5V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:2120pF @ 10V
  • FET Feature:--
  • Power Dissipation (Max):2.8W (Ta), 96W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-VSON (3.3x3.3)
  • Package / Case:8-PowerVDFN
  • Base Part Number:CSD25404

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Describe

This –20 V, 5.5 mΩ NexFET™ power MOSFET is a Designed to minimize losses in power conversion loads Management application of SON 3.3 mm × 3.3 mm package that provides an excellent thermal performance of the size of the device.

2. Feature

    1. Ultra-low Qg and Qgd

    2. Low thermal resistance

    3. Low RDS (on)

    4. Halogen free

    5. RoHS Compliant

    6. Lead-free terminal plating

    7. SON 3.3 mm × 3.3 mm plastic package

3. Application

    1. DC-DC converter

    2. Battery management

    3. Load switch

    4. Battery protection

4. Pin configuration

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5. Electrical Characteristics

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