DTC115GUAT106 ROHM Semiconductor | HongDa Electronics

DTC115GUAT106 HongDa Electronics

Manufacturer Part# DTC115GUAT106
Product CategoryDiscrete Semiconductor Products
Short DescriptionTRANS PREBIAS NPN 200MW UMT3
More DetailPre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...

In Stock: 1000

Can ship immediately

Datasheet:

DTC115GUAT106 Datasheet

Technical Details

Series:--
Packaging:Tape & Reel (TR)
Part Status:Not For New Designs
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Emitter Base (R2):100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA

Current - Collector Cutoff (Max):500nA (ICBO)
Frequency - Transition:250MHz
Power - Max:200mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:UMT3
Base Part Number:DTC115

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