EM6K34T2CR Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate, 0.9V Drive
• Drain to Source Voltage (Vdss):50V
• Current - Continuous Drain (Id) @ 25°C:200mA
• Rds On (Max) @ Id, Vgs:2.2 Ohm @ 200mA, 4.5V
• Vgs(th) (Max) @ Id:800mV @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:--
• Input Capacitance (Ciss) (Max) @ Vds:26pF @ 10V
• Power - Max:120mW
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-563, SOT-666
• Supplier Device Package:EMT6