FQA33N10

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:TO-3P-3, SC-65-3
• Supplier Device Package:TO-3P
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):163W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1500pF @ 25V
• Vgs (Max):±25V
• Gate Charge (Qg) (Max) @ Vgs:51nC @ 10V

• Series:QFET®
• Rds On (Max) @ Id, Vgs:52 mOhm @ 18A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:36A (Tc)
• Drain to Source Voltage (Vdss):100V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tube