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GP1M009A060H

Global Power Technologies Group
GP1M009A060H HongDa Electronics GP1M009A060H
  • Manufacturer Part# GP1M009A060H
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 9A TO220
  • More DetailN-Channel 600V 9A (Tc) 158W (Tc) Through Hole TO-2...
In Stock: 1000

Can ship immediately

Datasheet:
GP1M009A060H Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):158W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1440pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:1 Ohm @ 4.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:9A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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