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GP1M018A020FG

Global Power Technologies Group
GP1M018A020FG HongDa Electronics GP1M018A020FG
  • Manufacturer Part# GP1M018A020FG
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 200V 18A TO220F
  • More DetailN-Channel 200V 18A (Tc) 30.4W (Tc) Through Hole TO...
In Stock: 1000

Can ship immediately

Datasheet:
GP1M018A020FG Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):30.4W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:950pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:170 mOhm @ 9A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:18A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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