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IMB3AT110

ROHM Semiconductor
IMB3AT110 HongDa Electronics IMB3AT110
  • Manufacturer Part# IMB3AT110
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PREBIAS DUAL PNP SMT6
  • More DetailPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
In Stock: 1000

Can ship immediately

Datasheet:
IMB3AT110 Datasheet

Technical Details

  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • Base Part Number:MB3
  • Supplier Device Package:SMT6
  • Package / Case:SC-74, SOT-457
  • Mounting Type:Surface Mount
  • Power - Max:300mW
  • Frequency - Transition:250MHz
  • Current - Collector Cutoff (Max):--
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 5mA

 

  • Series:--
  • Resistor - Emitter Base (R2):--
  • Resistor - Base (R1):4.7 kOhms
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Current - Collector (Ic) (Max):100mA
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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