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IPA65R600E6XKSA1

Infineon Technologies
IPA65R600E6XKSA1 HongDa Electronics IPA65R600E6XKSA1
  • Manufacturer Part# IPA65R600E6XKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 7.3A TO220
  • More DetailN-Channel 650V 7.3A (Tc) 28W (Tc) Through Hole PG-...
In Stock: 722

Can ship immediately

Datasheet:
IPA65R600E6XKSA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 210µA
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:PG-TO-220-FP
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):28W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:440pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V

 

  • Series:CoolMOS™
  • Rds On (Max) @ Id, Vgs:600 mOhm @ 2.1A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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