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IPP051N15N5AKSA1

Infineon Technologies
IPP051N15N5AKSA1 HongDa Electronics IPP051N15N5AKSA1
  • Manufacturer Part# IPP051N15N5AKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMV POWER MOS
  • More DetailN-Channel 150V 120A 500mW (Tc) Through Hole PG-TO-...
In Stock: 1000

Can ship immediately

Datasheet:
IPP051N15N5AKSA1 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:100nC @ 10V
  • Package / Case:TO-220-3
  • Supplier Device Package:PG-TO-220-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):500mW (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:7800pF @ 75V
  • Vgs (Max):±20V
  • Series:OptiMOS™ 5

 

  • Vgs(th) (Max) @ Id:4.6V @ 264µA
  • Rds On (Max) @ Id, Vgs:5.1 mOhm @ 60A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):8V, 10V
  • Current - Continuous Drain (Id) @ 25°C:120A
  • Drain to Source Voltage (Vdss):150V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active

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