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IPP120N06S4H1AKSA2

Infineon Technologies
IPP120N06S4H1AKSA2 HongDa Electronics IPP120N06S4H1AKSA2
  • Manufacturer Part# IPP120N06S4H1AKSA2
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 60V 120A TO220-3
  • More DetailN-Channel 60V 120A (Tc) 250W (Tc) Through Hole PG-...
In Stock: 1000

Can ship immediately

Datasheet:
IPP120N06S4H1AKSA2 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 200µA
  • Package / Case:TO-220-3
  • Supplier Device Package:PG-TO220-3-1
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):250W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:21900pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:270nC @ 10V

 

  • Series:Automotive, AEC-Q101, OptiMOS™
  • Rds On (Max) @ Id, Vgs:2.4 mOhm @ 100A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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