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IRF6603TR1

Infineon Technologies
IRF6603TR1 HongDa Electronics IRF6603TR1
  • Manufacturer Part# IRF6603TR1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 30V 27A DIRECTFET
  • More DetailN-Channel 30V 27A (Ta), 92A (Tc) 3.6W (Ta), 42W (T...
In Stock: 1000

Can ship immediately

Datasheet:
IRF6603TR1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Package / Case:DirectFET™ Isometric MT
  • Supplier Device Package:DIRECTFET™ MT
  • Mounting Type:Surface Mount
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.6W (Ta), 42W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:6590pF @ 15V
  • Vgs (Max):+20V, -12V
  • Gate Charge (Qg) (Max) @ Vgs:72nC @ 4.5V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:3.4 mOhm @ 25A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:27A (Ta), 92A (Tc)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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