• Manufacturer Part# IRF7241PBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 40V 6.2A 8-SOICP-Channel 40V 6.2A (Ta)...
  • More DetailN/A
In Stock: 2447

Can ship immediately

Technical Details

  • Series:HEXFET®
  • Packaging:Tube 
  • Part Status:Discontinued at Digi-Key
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:41 mOhm @ 6.2A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:80nC @ 10V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3220pF @ 25V
  • FET Feature:--
  • Power Dissipation (Max):2.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Base Part Number:--

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Describe

New trench HEXFET® power MOSFET from International rectifier adopts advanced technology Technology to achieve extremely low on-resistance Per silicon area. This benefit, combined Rugged equipment design, HEXFET power supply MOSFETs are well known and provide designers with Use extremely efficient and reliable equipment In battery and load management applications.

2. Feature

    1. Groove technology

    2. Ultra-low on-resistance

    3. P-channel MOSFET

    4. Provide tape and reel form

    5. Lead-free

3. Pin configuration

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4. Electrical Characteristics

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