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1. Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
2. Feature
1. Advanced Process Technology
2. Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
3. Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
4. Low QG for Fast Response
5. High Repetitive Peak Current Capability for Reliable Operation
6. Short Fall & Rise Times for Fast Switching
7. 175°C Operating Junction Temperature for Improved Ruggedness
8. Repetitive Avalanche Capability for Robustness and Reliability
