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IRFBF20LPBF

Vishay Siliconix
IRFBF20LPBF HongDa Electronics IRFBF20LPBF
  • Manufacturer Part# IRFBF20LPBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 900V 1.7A TO-262
  • More DetailN-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Throu...
In Stock: 3042

Can ship immediately

Datasheet:
IRFBF20LPBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:I2PAK
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.1W (Ta), 54W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:490pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:8 Ohm @ 1A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
  • Drain to Source Voltage (Vdss):900V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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