IRFI4510GPBF Infineon Technologies | HongDa Electronics

IRFI4510GPBF HongDa Electronics

Manufacturer Part# IRFI4510GPBF
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N CH 100V 35A TO220
More DetailN-Channel 100V 35A (Tc) 42W (Tc) Through Hole TO-2...

In Stock: 586

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Datasheet:

IRFI4510GPBF Datasheet

Technical Details

Vgs(th) (Max) @ Id:4V @ 100µA
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220AB Full-Pak
Mounting Type:Through Hole
Operating Temperature:-55°C ~ 175°C (TJ)
Power Dissipation (Max):42W (Tc)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:2998pF @ 50V
Vgs (Max):±20V
Gate Charge (Qg) (Max) @ Vgs:81nC @ 10V

Series:HEXFET®
Rds On (Max) @ Id, Vgs:13.5 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On):10V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drain to Source Voltage (Vdss):100V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Active
Packaging:Tube

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