IRFP4110PBF Infineon Technologies | HongDa Electronics

IRFP4110PBF HongDa Electronics

Manufacturer Part# IRFP4110PBF
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 100V 120A TO-247ACN-Channel 100V 120A ...
More DetailN/A

In Stock: 853

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Datasheet:

IRFP4110PBF Datasheet

Technical Details

Series:HEXFET®
Packaging:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Power - Max:--

Gate Charge (Qg) (Max) @ Vgs:210nC @ 10V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9620pF @ 50V
FET Feature:--
Power Dissipation (Max):370W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
Base Part Number:--

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