• Manufacturer Part# IRFR4105ZTRPBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 55V 30A DPAKN-Channel 55V 30A (Tc) 48W...
  • More DetailN/A
In Stock: 4000

Can ship immediately

Technical Details

  • Series:HEXFET®
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:24.5 mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:740pF @ 25V
  • FET Feature:--
  • Power Dissipation (Max):48W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D-Pak
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number:--

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Describe

The HEXFET® power MOSFET uses the latest Processing technology reaches extremely low On-resistance per silicon area. Additional functions The junction operating temperature of this design is 175°C Temperature, fast switching speed, improved Repeat the avalanche rating. These characteristics Combined to make this design very effective Reliable equipment, suitable for all kinds of application.

2. Feature

    1. Advanced Process Technology

    2. Ultra Low On-Resistance

    3. 175°C Operating Temperature

    4. Fast Switching

    5. Repetitive Avalanche Allowed up to Tjmax

    6. Lead-Free

3. Electrical Characteristics

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4. Package overview

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