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IXFH6N120P

IXYS
IXFH6N120P HongDa Electronics IXFH6N120P
  • Manufacturer Part# IXFH6N120P
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 1200V 6A TO-247
  • More DetailN-Channel 1200V 6A (Tc) 250W (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
IXFH6N120P Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD (IXFH)
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):250W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2830pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:92nC @ 10V

 

  • Series:HiPerFET™, PolarP2™
  • Rds On (Max) @ Id, Vgs:2.4 Ohm @ 500mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:6A (Tc)
  • Drain to Source Voltage (Vdss):1200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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