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IXFH80N65X2-4 Discrete Semiconductor Products

IXYS
IXFH80N65X2-4 HongDa Electronics IXFH80N65X2-4
  • Manufacturer Part# IXFH80N65X2-4
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH
  • More DetailN-Channel 650V 80A (Tc) 890W (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
IXFH80N65X2-4 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 4mA
  • Package / Case:TO-247-4
  • Supplier Device Package:TO-247-4L
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):890W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:8300pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:140nC @ 10V

 

  • Series:HiPerFET™
  • Rds On (Max) @ Id, Vgs:38 mOhm @ 500mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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