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IXFX170N20T

IXYS
IXFX170N20T HongDa Electronics IXFX170N20T
  • Manufacturer Part# IXFX170N20T
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 200V 170A PLUS247
  • More DetailN-Channel 200V 170A (Tc) 1150W (Tc) Through Hole P...
In Stock: 1000

Can ship immediately

Datasheet:
IXFX170N20T Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 4mA
  • Package / Case:TO-247-3
  • Supplier Device Package:PLUS247™-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):1150W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:19600pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:265nC @ 10V

 

  • Series:GigaMOS™
  • Rds On (Max) @ Id, Vgs:11 mOhm @ 60A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:170A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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