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IXTP06N120P

IXYS
IXTP06N120P HongDa Electronics IXTP06N120P
  • Manufacturer Part# IXTP06N120P
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 1200V 600MA TO-220
  • More DetailN-Channel 1200V 600mA (Tc) 42W (Tc) Through Hole T...
In Stock: 1000

Can ship immediately

Datasheet:
IXTP06N120P Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 50µA
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):42W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:270pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:13.3nC @ 10V

 

  • Series:PolarVHV™
  • Rds On (Max) @ Id, Vgs:32 Ohm @ 500mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:600mA (Tc)
  • Drain to Source Voltage (Vdss):1200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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