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JAN2N3960

Microsemi Corporation
JAN2N3960 HongDa Electronics JAN2N3960
  • Manufacturer Part# JAN2N3960
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN 12V TO-18
  • More DetailBipolar (BJT) Transistor NPN 12V 400mW Through H...
In Stock: 1000

Can ship immediately

Datasheet:
JAN2N3960 Datasheet

Technical Details

  • Series:Military, MIL-PRF-19500/399
  • Packaging:Bulk 
  • Part Status:Active
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 3mA, 30mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 1V

 

  • Power - Max:400mW
  • Frequency - Transition:--
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18 (TO-206AA)

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