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JAN2N6788

Microsemi Corporation
JAN2N6788 HongDa Electronics JAN2N6788
  • Manufacturer Part# JAN2N6788
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH TO-205AF TO-39
  • More DetailN-Channel 100V 6A (Tc) 800mW (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
JAN2N6788 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-205AF Metal Can
  • Supplier Device Package:TO-39
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):800mW (Tc)
  • FET Feature:--
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
  • Series:Military, MIL-PRF-19500/555

 

  • Rds On (Max) @ Id, Vgs:350 mOhm @ 6A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:6A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Bulk 

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