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JANSR2N3810U

Microsemi Corporation
JANSR2N3810U HongDa Electronics JANSR2N3810U
  • Manufacturer Part# JANSR2N3810U
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionRH SMALL-SIGNAL BJT
  • More DetailBipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50...
In Stock: 1000

Can ship immediately

Datasheet:
JANSR2N3810U Datasheet

Technical Details

  • Series:Military, MIL-PRF-19500/336
  • Part Status:Active
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):50mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 100µA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 1mA, 5V

 

  • Power - Max:350mW
  • Frequency - Transition:--
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, No Lead
  • Supplier Device Package:6-SMD

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