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JANSR2N7381

Microsemi Corporation
JANSR2N7381 HongDa Electronics JANSR2N7381
  • Manufacturer Part# JANSR2N7381
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionN CHANNEL MOSFET TO-257 RAD
  • More DetailN-Channel 200V 9.4A (Tc) 2W (Ta), 75W (Tc) Through...
In Stock: 1000

Can ship immediately

Datasheet:
JANSR2N7381 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Package / Case:TO-257-3
  • Supplier Device Package:TO-257
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2W (Ta), 75W (Tc)
  • FET Feature:--
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:50nC @ 12V

 

  • Series:Military, MIL-PRF-19500/614
  • Rds On (Max) @ Id, Vgs:490 mOhm @ 9.4A, 12V
  • Drive Voltage (Max Rds On, Min Rds On):12V
  • Current - Continuous Drain (Id) @ 25°C:9.4A (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete

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