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MMBT2222ALT1HTSA1

Infineon Technologies
MMBT2222ALT1HTSA1 HongDa Electronics MMBT2222ALT1HTSA1
  • Manufacturer Part# MMBT2222ALT1HTSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN 40V 0.6A SOT-23Bipolar (BJT) Transistor ...
  • More DetailN/A
In Stock: 1000

Can ship immediately

Datasheet:
MMBT2222ALT1HTSA1 Datasheet

Technical Details

  • Series:MMBT2222
  • Packaging:Tape & Reel (TR) 
  • FET Type:--
  • Part Status:Last Time Buy
  • Technology:Si
  • Transistor Type:NPN
  • Drain to Source Voltage (Vdss):--
  • Current - Collector (Ic) (Max):600mA
  • Current - Continuous Drain (Id) @ 25°C:--
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Drive Voltage (Max Rds On, Min Rds On):--
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Rds On (Max) @ Id, Vgs:--
  • Current - Collector Cutoff (Max):10nA (ICBO)
  • Vgs(th) (Max) @ Id:--

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Gate Charge (Qg) (Max) @ Vgs:--
  • Power - Max:330mW
  • Vgs (Max):--
  • Frequency - Transition:300MHz
  • Input Capacitance (Ciss) (Max) @ Vds:--
  • Operating Temperature:150°C (TJ)
  • FET Feature:--
  • Mounting Type:Surface Mount
  • Power Dissipation (Max):--
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Base Part Number:MBT2222A

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Feature

    1. NPN silicon switching transistor

    2. Low collector-emitter saturation voltage

    3. Complementary type: SMBT2907A / MMBT2907A (PNP)

    4. Lead-free (RoHS compliant) package

    5. Passed AEC Q101 certification

2. Package Outline

      image.png

3. Standard Packing

     image.png

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