• Manufacturer Part# MMBT4403
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PNP 40V 0.6A SOT-23Bipolar (BJT) Transistor ...
  • More DetailN/A
In Stock: 54000

Can ship immediately

Datasheet:

Technical Details

  • Series:MMBT4403
  • Packaging:Tape & Reel (TR) 
  • FET Type:--
  • Part Status:Last Time Buy
  • Technology:Si
  • Transistor Type:PNP
  • Drain to Source Voltage (Vdss):--
  • Current - Collector (Ic) (Max):600mA
  • Current - Continuous Drain (Id) @ 25°C:--
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Drive Voltage (Max Rds On, Min Rds On):--
  • Vce Saturation (Max) @ Ib, Ic:750mV @ 50mA, 500mA
  • Rds On (Max) @ Id, Vgs:--
  • Current - Collector Cutoff (Max):--
  • Vgs(th) (Max) @ Id:--

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
  • Gate Charge (Qg) (Max) @ Vgs:--
  • Power - Max:350mW
  • Vgs (Max):--
  • Frequency - Transition:200MHz
  • Input Capacitance (Ciss) (Max) @ Vds:--
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • FET Feature:--
  • Mounting Type:Surface Mount
  • Power Dissipation (Max):--
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Base Part Number:MMBT4403

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. FEATURES

    1. Power dissipation

        - PCM: 0.3 W(Tamb=25O °C)

    2. Collector current

         - ICM: - 0.6 A

    3. Collector-base voltage

         - V(BR)CBO: - 40 V

    4. Operating and storage junction temperature range

         - TJ,Tstg: -55O°C to+150O°C

2. MECHANICAL DATA

    1. Epoxy: UL 94V-O rate flame retardant

    2. Lead: MIL-STD-202E method 208C guaranteed

    3. Mounting position: Any

    4. Weight: 0.008 gram

3. Dimensions

    image.png


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