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MMBT5401LT1G

ON Semiconductor
MMBT5401LT1G HongDa Electronics MMBT5401LT1G
  • Manufacturer Part# MMBT5401LT1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PNP 150V 0.5A SOT23Bipolar (BJT) Transistor ...
  • More DetailN/A
In Stock: 175000

Can ship immediately

Datasheet:
MMBT5401LT1G Datasheet

Technical Details

  • Series:MMBT5401L
  • Packaging:Tape & Reel (TR) 
  • FET Type:--
  • Part Status:Active
  • Technology:Si
  • Transistor Type:PNP
  • Drain to Source Voltage (Vdss):--
  • Current - Collector (Ic) (Max):500mA
  • Current - Continuous Drain (Id) @ 25°C:--
  • Voltage - Collector Emitter Breakdown (Max):150V
  • Drive Voltage (Max Rds On, Min Rds On):--
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
  • Rds On (Max) @ Id, Vgs:--
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • Vgs(th) (Max) @ Id:--

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
  • Gate Charge (Qg) (Max) @ Vgs:--
  • Power - Max:300mW
  • Vgs (Max):--
  • Frequency - Transition:300MHz
  • Input Capacitance (Ciss) (Max) @ Vds:--
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • FET Feature:--
  • Mounting Type:Surface Mount
  • Power Dissipation (Max):--
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Base Part Number:MMBT5401

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Feature

    1. S and NSV prefixes for automotive and other applications where required Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Competent

    2. These devices are lead-free, halogen-free/BFR-free, and RoHS compliant Compliance

2. Pin configuration

image.png

3. Thermal characteristics

image.png

4. Product description

image.png


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