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MMBT5551LT1G Discrete Semiconductor Products

ON Semiconductor
MMBT5551LT1G HongDa Electronics MMBT5551LT1G
  • Manufacturer Part# MMBT5551LT1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN 160V 0.6A SOT23
  • More DetailBipolar (BJT) Transistor NPN 160V 600mA 225mW Sur...
In Stock: 171000

Can ship immediately

Datasheet:
MMBT5551LT1G Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600mA
  • Voltage - Collector Emitter Breakdown (Max):160V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V

 

  • Power - Max:225mW
  • Frequency - Transition:--
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Base Part Number:MMBT5551

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