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MMUN2232LT1G Discrete Semiconductor Products

ON Semiconductor
MMUN2232LT1G HongDa Electronics MMUN2232LT1G
  • Manufacturer Part# MMUN2232LT1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PREBIAS NPN 246MW SOT23-3
  • More DetailPre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
In Stock: 1000

Can ship immediately

Datasheet:
MMUN2232LT1G Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5mA, 10V

 

  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Power - Max:246mW
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Base Part Number:MMUN22**L

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