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NDD02N60Z-1G

ON Semiconductor
NDD02N60Z-1G HongDa Electronics NDD02N60Z-1G
  • Manufacturer Part# NDD02N60Z-1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V IPAK
  • More DetailN-Channel 600V 2.2A (Tc) 57W (Tc) Through Hole I-P...
In Stock: 1000

Can ship immediately

Datasheet:
NDD02N60Z-1G Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 50µA
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package:I-PAK
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):57W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:274pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:10.1nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:4.8 Ohm @ 1A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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