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1. Description
This insulated gate bipolar transistor (IGBT) has a rugged and Cost-effective Field Stop II trench structure and provide excellent Performance in demanding switching applications, providing low On-state voltage and minimum switching loss. IGBT is very suitable UPS and solar applications. Included in the device is a soft And a fast co-packaged freewheeling diode with low forward voltage.
2. Feature
1. Extremely efficient grooves using field stop technology
2. TJmax = 175°C
3. Soft fast reverse recovery diode
4. Optimized for high-speed switching
5. 10 seconds short circuit capability
6. These are lead-free devices
3. Application
1. Solar inverters
2. Uninterruptible power supply inverter power supply (UPS)
3. Welding
4. Package dimensions
