NSV1C201MZ4T1G Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• Transistor Type:NPN
• Current - Collector (Ic) (Max):2A
• Voltage - Collector Emitter Breakdown (Max):100V
• Vce Saturation (Max) @ Ib, Ic:180mV @ 200mA, 2A
• Current - Collector Cutoff (Max):100nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 2V
• Power - Max:800mW
• Frequency - Transition:100MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-261-4, TO-261AA
• Supplier Device Package:SOT-223 (TO-261)