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NSVBA114EDXV6T1G

ON Semiconductor
NSVBA114EDXV6T1G HongDa Electronics NSVBA114EDXV6T1G
  • Manufacturer Part# NSVBA114EDXV6T1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS 2PNP PREBIAS 0.5W SOT563
  • More DetailPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
In Stock: 1000

Can ship immediately

Datasheet:
NSVBA114EDXV6T1G Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V

 

  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:--
  • Power - Max:500mW
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563-6

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