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NSVMMBT6517LT1G

ON Semiconductor
NSVMMBT6517LT1G HongDa Electronics NSVMMBT6517LT1G
  • Manufacturer Part# NSVMMBT6517LT1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS NPN 350V 0.1A SOT23
  • More DetailBipolar (BJT) Transistor NPN 350V 100mA 200MHz 225...
In Stock: 1000

Can ship immediately

Datasheet:
NSVMMBT6517LT1G Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):350V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 50mA, 10V
  • Power - Max:225mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)

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