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NTMFS4H013NFT1G

ON Semiconductor
NTMFS4H013NFT1G HongDa Electronics NTMFS4H013NFT1G
  • Manufacturer Part# NTMFS4H013NFT1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 25V 35A SO8FL
  • More DetailN-Channel 25V 43A (Ta), 269A (Tc) 2.7W (Ta), 104W ...
In Stock: 1000

Can ship immediately

Datasheet:
NTMFS4H013NFT1G Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:5-DFN (5x6) (8-SOFL)
  • Mounting Type:Surface Mount
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):2.7W (Ta), 104W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3923pF @ 12V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:56nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:0.9 mOhm @ 30A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:43A (Ta), 269A (Tc)
  • Drain to Source Voltage (Vdss):25V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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