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1. Describe
PNP low VCEsat in the small SOT23 (TO-236AB) Breakthrough Small Signal (BISS) Transistor Surface Mount Device (SMD) plastic package.
2. Feature
1. Low collector-emitter saturation voltage VCEsat
2. High collector current capability: IC and ICM
3. High collector current gain (hFE) under high IC
4. Higher efficiency and less heat generation
5. High temperature applications up to 175 °C
6. AEC-Q101 qualified
3. Application
1. Energy management
2. DC-DC conversion
3. Power cord switch
4. Battery charger switch
5. Peripheral driver
6. Drivers in low supply voltage applications (such as lamps and LEDs)
7. Inductive load driver
7. product information
Package overview
